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Kossko I. A. Features of Auger-emission in channeling [Електронний ресурс] / I. A. Kossko, A. Ye. Denisov // Semiconductor physics, quantum electronics & optoelectronics. - 2014. - Vol. 17, № 1. - С. 97-99. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2014_17_1_19 Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) character of the yield value for low-energy Auger-electrons in silicon, when changing the angle of acting initial radiation during sample rotation.
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